IPW60R099C7 MOSFET Transistor

The IPW60R099C7 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPW60R099C7 transistor as follows.

IPW60R099C7 Transistor Specification

Transistor Code		IPW60R099C7
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247
Transistor SMD Code		60C7099
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	22A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.099Ohm
Power Dissipation (Maximum)	PD	110W
Drain-Source Capacitance		33pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8nS
Gate-Threshold Voltage (Maximum)		4V

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