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IPW60R040C7 MOSFET Transistor

The IPW60R040C7 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPW60R040C7 transistor as follows.

Circuit diagram symbol of the IPW60R040C7 transistor

IPW60R040C7 Transistor Specification

Transistor Code IPW60R040C7
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-247
Transistor SMD Code 60C7040
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 50A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.04Ohm
Power Dissipation (Maximum) PD 227W
Drain-Source Capacitance 85pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 11nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 107nC

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