IPW50R399CP MOSFET Transistor

The IPW50R399CP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPW50R399CP transistor as follows.

IPW50R399CP Transistor Specification

Transistor Code		IPW50R399CP
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	500V
Drain Current (Maximum)	ID	9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.399Ohm
Power Dissipation (Maximum)	PD	83W
Total Gate Charge		17nC

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