IPU80R2K8CE MOSFET Transistor

The IPU80R2K8CE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPU80R2K8CE transistor as follows.

IPU80R2K8CE Transistor Specification

Transistor Code		IPU80R2K8CE
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-251
Transistor SMD Code		8R2K8CE
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.8Ohm
Power Dissipation (Maximum)	PD	42W
Drain-Source Capacitance		13pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		15nS
Gate-Threshold Voltage (Maximum)		3.9V

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