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IPU80R2K8CE MOSFET Transistor

The IPU80R2K8CE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPU80R2K8CE transistor as follows.

Circuit diagram symbol of the IPU80R2K8CE transistor

IPU80R2K8CE Transistor Specification

Transistor Code IPU80R2K8CE
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-251
Transistor SMD Code 8R2K8CE
Drain-Source Voltage (Maximum) VDS 800V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 1.9A
Drain-Source On-State Resistance (Maximum) RDS(on) 2.8Ohm
Power Dissipation (Maximum) PD 42W
Drain-Source Capacitance 13pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 15nS
Gate-Threshold Voltage (Maximum) 3.9V

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