IPU60R600C6 MOSFET Transistor

The IPU60R600C6 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPU60R600C6 transistor as follows.

IPU60R600C6 Transistor Specification

Transistor Code		IPU60R600C6
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-251
Transistor SMD Code		6R600C6
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	7.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.6Ohm
Power Dissipation (Maximum)	PD	63W
Drain-Source Capacitance		30pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9nS
Gate-Threshold Voltage (Maximum)		3.5V

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