IPU103N08N3G MOSFET Transistor

The IPU103N08N3G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPU103N08N3G transistor as follows.

IPU103N08N3G Transistor Specification

Transistor Code		IPU103N08N3G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		IPAK_TO251
Drain-Source Voltage (Maximum)	VDS	80V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0103Ohm
Power Dissipation (Maximum)	PD	100W

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