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IPT020N10N3 MOSFET Transistor

The IPT020N10N3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPT020N10N3 transistor as follows.

Circuit diagram symbol of the IPT020N10N3 transistor

IPT020N10N3 Transistor Specification

Transistor Code IPT020N10N3
Transistor Type MOSFET
Control Channel Type N-Channel
Package HSOF-8-1
Transistor SMD Code 020N10N3
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 300A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.002Ohm
Power Dissipation (Maximum) PD 375W
Drain-Source Capacitance 2010pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 58nS
Gate-Threshold Voltage (Maximum) 3.5V
Total Gate Charge 156nC

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