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IPS12CN10LG MOSFET Transistor

The IPS12CN10LG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPS12CN10LG transistor as follows.

Circuit diagram symbol of the IPS12CN10LG transistor

IPS12CN10LG Transistor Specification

Transistor Code IPS12CN10LG
Transistor Type MOSFET
Control Channel Type N-Channel
Package IPAK-SL_TO251-SL
Drain-Source Voltage (Maximum) VDS 100V
Drain Current (Maximum) ID 69A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.012Ohm
Power Dissipation (Maximum) PD 125W
Total Gate Charge 58nC

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