IPS118N10NG MOSFET Transistor

The IPS118N10NG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPS118N10NG transistor as follows.

IPS118N10NG Transistor Specification

Transistor Code		IPS118N10NG
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		IPAK-SL_TO251-SL
Drain-Source Voltage (Maximum)	VDS	100V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0118Ohm
Power Dissipation (Maximum)	PD	125W
Total Gate Charge		49nC

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