IPS090N03L MOSFET Transistor

The IPS090N03L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPS090N03L transistor as follows.

IPS090N03L Transistor Specification

Transistor Code		IPS090N03L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-251
Transistor SMD Code		090N03L
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	40A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.009Ohm
Power Dissipation (Maximum)	PD	42W
Drain-Source Capacitance		500pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		3nS
Gate-Threshold Voltage (Maximum)		2.2V

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