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IPS031N03L MOSFET Transistor

The IPS031N03L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPS031N03L transistor as follows.

Circuit diagram symbol of the IPS031N03L transistor

IPS031N03L Transistor Specification

Transistor Code IPS031N03L
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-251
Transistor SMD Code 031N03L
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 90A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0031Ohm
Power Dissipation (Maximum) PD 94W
Drain-Source Capacitance 1400pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 6nS
Gate-Threshold Voltage (Maximum) 2.2V

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