IPP65R660CFD MOSFET Transistor

The IPP65R660CFD is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPP65R660CFD transistor as follows.

IPP65R660CFD Transistor Specification

Transistor Code		IPP65R660CFD
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	650V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.66Ohm
Power Dissipation (Maximum)	PD	63W
Total Gate Charge		22nC

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