IPP65R600E6 MOSFET Transistor

The IPP65R600E6 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPP65R600E6 transistor as follows.

IPP65R600E6 Transistor Specification

Transistor Code		IPP65R600E6
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	650V
Drain Current (Maximum)	ID	7.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.6Ohm
Power Dissipation (Maximum)	PD	63W
Total Gate Charge		23nC

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