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IPP65R095C7 MOSFET Transistor

The IPP65R095C7 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPP65R095C7 transistor as follows.

Circuit diagram symbol of the IPP65R095C7 transistor

IPP65R095C7 Transistor Specification

Transistor Code IPP65R095C7
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Transistor SMD Code 65C7095
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 24A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.095Ohm
Power Dissipation (Maximum) PD 128W
Drain-Source Capacitance 33pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 12nS
Gate-Threshold Voltage (Maximum) 4V

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