IPP65R074C6 MOSFET Transistor

The IPP65R074C6 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPP65R074C6 transistor as follows.

IPP65R074C6 Transistor Specification

Transistor Code		IPP65R074C6
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Transistor SMD Code		65C6074
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	57.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.074Ohm
Power Dissipation (Maximum)	PD	480.8W
Drain-Source Capacitance		170pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		7nS
Gate-Threshold Voltage (Maximum)		3.5V
Total Gate Charge		138nC

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