IPP25N06S3-25 MOSFET Transistor

The IPP25N06S3-25 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPP25N06S3-25 transistor as follows.

IPP25N06S3-25 Transistor Specification

Transistor Code		IPP25N06S3-25
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Transistor SMD Code		3N0625
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	25A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0248Ohm
Power Dissipation (Maximum)	PD	48W
Drain-Source Capacitance		283pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		27nS
Gate-Threshold Voltage (Maximum)		4V

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