IPP12CN10NG MOSFET Transistor

The IPP12CN10NG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPP12CN10NG transistor as follows.

IPP12CN10NG Transistor Specification

Transistor Code		IPP12CN10NG
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	100V
Drain Current (Maximum)	ID	67A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0129Ohm
Power Dissipation (Maximum)	PD	125W

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