IPP120N06S4-H1 MOSFET Transistor

The IPP120N06S4-H1 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPP120N06S4-H1 transistor as follows.

IPP120N06S4-H1 Transistor Specification

Transistor Code		IPP120N06S4-H1
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PGTO220
Drain-Source Voltage (Maximum)	VDS	60V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0024Ohm
Power Dissipation (Maximum)	PD	250W
Total Gate Charge		270nC

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