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IPP120N06NG MOSFET Transistor

The IPP120N06NG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPP120N06NG transistor as follows.

Circuit diagram symbol of the IPP120N06NG transistor

IPP120N06NG Transistor Specification

Transistor Code IPP120N06NG
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220
Drain-Source Voltage (Maximum) VDS 60V
Drain Current (Maximum) ID 75A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.012Ohm
Power Dissipation (Maximum) PD 158W
Total Gate Charge 62nC

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