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IPP110N20NA MOSFET Transistor

The IPP110N20NA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPP110N20NA transistor as follows.

Circuit diagram symbol of the IPP110N20NA transistor

IPP110N20NA Transistor Specification

Transistor Code IPP110N20NA
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Transistor SMD Code 110N20NA
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 88A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0107Ohm
Power Dissipation (Maximum) PD 300W
Drain-Source Capacitance 401pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 26nS
Gate-Threshold Voltage (Maximum) 4V

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