IPP110N06LG MOSFET Transistor

The IPP110N06LG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPP110N06LG transistor as follows.

IPP110N06LG Transistor Specification

Transistor Code		IPP110N06LG
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	60V
Drain Current (Maximum)	ID	78A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0113Ohm
Power Dissipation (Maximum)	PD	158W

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