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IPP083N10N5 MOSFET Transistor

The IPP083N10N5 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPP083N10N5 transistor as follows.

Circuit diagram symbol of the IPP083N10N5 transistor

IPP083N10N5 Transistor Specification

Transistor Code IPP083N10N5
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220
Transistor SMD Code 083N10N5
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 73A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0083Ohm
Power Dissipation (Maximum) PD 100W
Drain-Source Capacitance 337pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 5nS
Gate-Threshold Voltage (Maximum) 3.8V

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