IPP041N12N3G MOSFET Transistor

The IPP041N12N3G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPP041N12N3G transistor as follows.

IPP041N12N3G Transistor Specification

Transistor Code		IPP041N12N3G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	120V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0041Ohm
Power Dissipation (Maximum)	PD	300W
Total Gate Charge		158nC

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