IPP027N08N5 MOSFET Transistor

The IPP027N08N5 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPP027N08N5 transistor as follows.

IPP027N08N5 Transistor Specification

Transistor Code		IPP027N08N5
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Transistor SMD Code		027N08N5
Drain-Source Voltage (Maximum)	VDS	80V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0027Ohm
Power Dissipation (Maximum)	PD	214W
Drain-Source Capacitance		1100pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		14nS
Gate-Threshold Voltage (Maximum)		3.8V
Total Gate Charge		99nC

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