IPL65R725CFD MOSFET Transistor

The IPL65R725CFD is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPL65R725CFD transistor as follows.

IPL65R725CFD Transistor Specification

Transistor Code		IPL65R725CFD
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		THINPAK8X8
Transistor SMD Code		65F6725
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	5.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.725Ohm
Power Dissipation (Maximum)	PD	62.5W
Drain-Source Capacitance		33pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8nS
Gate-Threshold Voltage (Maximum)		4.5V

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