IPL65R310E6 MOSFET Transistor

The IPL65R310E6 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPL65R310E6 transistor as follows.

IPL65R310E6 Transistor Specification

Transistor Code		IPL65R310E6
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		THINPAK8X8
Transistor SMD Code		65E6310
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	13.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.31Ohm
Power Dissipation (Maximum)	PD	104W
Drain-Source Capacitance		60pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9nS
Gate-Threshold Voltage (Maximum)		3.5V

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