IPL65R099C7 MOSFET Transistor

The IPL65R099C7 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPL65R099C7 transistor as follows.

IPL65R099C7 Transistor Specification

Transistor Code		IPL65R099C7
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		THINPAK8X8
Transistor SMD Code		65C7099
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	21A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.099Ohm
Power Dissipation (Maximum)	PD	128W
Drain-Source Capacitance		33pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5nS
Gate-Threshold Voltage (Maximum)		4V

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