IPL60R180P6 MOSFET Transistor

The IPL60R180P6 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPL60R180P6 transistor as follows.

IPL60R180P6 Transistor Specification

Transistor Code		IPL60R180P6
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		THINPAK8X8
Transistor SMD Code		6R180P6
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	22.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.18Ohm
Power Dissipation (Maximum)	PD	176W
Drain-Source Capacitance		89pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		7.6nS
Gate-Threshold Voltage (Maximum)		4.5V

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