IPI90R800C3 MOSFET Transistor

The IPI90R800C3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPI90R800C3 transistor as follows.

IPI90R800C3 Transistor Specification

Transistor Code		IPI90R800C3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		I2PAK_TO262
Drain-Source Voltage (Maximum)	VDS	900V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	6.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.8Ohm
Power Dissipation (Maximum)	PD	104W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		3.5V
Total Gate Charge		42nC

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