IPI80N06S3-07 MOSFET Transistor

The IPI80N06S3-07 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPI80N06S3-07 transistor as follows.

IPI80N06S3-07 Transistor Specification

Transistor Code		IPI80N06S3-07
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-262
Transistor SMD Code		3N0607
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	80A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0065Ohm
Power Dissipation (Maximum)	PD	135W
Drain-Source Capacitance		1182pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		41nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		170nC

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