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IPI60R600CP MOSFET Transistor

The IPI60R600CP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPI60R600CP transistor as follows.

Circuit diagram symbol of the IPI60R600CP transistor

IPI60R600CP Transistor Specification

Transistor Code IPI60R600CP
Transistor Type MOSFET
Control Channel Type N-Channel
Package I2PAK_TO262
Drain-Source Voltage (Maximum) VDS 600V
Drain Current (Maximum) ID 6.1A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.6Ohm
Power Dissipation (Maximum) PD 60W
Total Gate Charge 21nC

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