IPI60R250CP MOSFET Transistor

The IPI60R250CP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPI60R250CP transistor as follows.

IPI60R250CP Transistor Specification

Transistor Code		IPI60R250CP
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		I2PAK_TO262
Drain-Source Voltage (Maximum)	VDS	600V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.25Ohm
Power Dissipation (Maximum)	PD	104W
Total Gate Charge		26nC

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