IPI60R099CPA MOSFET Transistor

The IPI60R099CPA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPI60R099CPA transistor as follows.

IPI60R099CPA Transistor Specification

Transistor Code		IPI60R099CPA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PGTO262
Drain-Source Voltage (Maximum)	VDS	600V
Drain Current (Maximum)	ID	31A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.105Ohm
Power Dissipation (Maximum)	PD	255W
Total Gate Charge		80nC

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