IPI50R350CP MOSFET Transistor

The IPI50R350CP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPI50R350CP transistor as follows.

IPI50R350CP Transistor Specification

Transistor Code		IPI50R350CP
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		I2PAK_TO262
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.35Ohm
Power Dissipation (Maximum)	PD	89W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		3.5V
Total Gate Charge		19nC

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