IPI041N12N3G MOSFET Transistor

The IPI041N12N3G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPI041N12N3G transistor as follows.

IPI041N12N3G Transistor Specification

Transistor Code		IPI041N12N3G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		I2PAK_TO262
Drain-Source Voltage (Maximum)	VDS	120V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0041Ohm
Power Dissipation (Maximum)	PD	300W
Total Gate Charge		158nC

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