IPI023NE7N3G MOSFET Transistor

The IPI023NE7N3G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPI023NE7N3G transistor as follows.

IPI023NE7N3G Transistor Specification

Transistor Code		IPI023NE7N3G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		I2PAK_TO262
Drain-Source Voltage (Maximum)	VDS	75V
Drain Current (Maximum)	ID	100A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0023Ohm
Power Dissipation (Maximum)	PD	300W
Total Gate Charge		155nC

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