IPD65R950CFD MOSFET Transistor

The IPD65R950CFD is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPD65R950CFD transistor as follows.

IPD65R950CFD Transistor Specification

Transistor Code		IPD65R950CFD
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Transistor SMD Code		65F6950
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.95Ohm
Power Dissipation (Maximum)	PD	36.7W
Drain-Source Capacitance		23pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		6.5nS
Gate-Threshold Voltage (Maximum)		4.5V

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