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IPD65R660CFDA MOSFET Transistor

The IPD65R660CFDA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPD65R660CFDA transistor as follows.

Circuit diagram symbol of the IPD65R660CFDA transistor

IPD65R660CFDA Transistor Specification

Transistor Code IPD65R660CFDA
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-252
Transistor SMD Code 65F660A
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.66Ohm
Power Dissipation (Maximum) PD 62.5W
Drain-Source Capacitance 32pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 8nS
Gate-Threshold Voltage (Maximum) 4.5V

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