IPD65R380E6 MOSFET Transistor

The IPD65R380E6 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPD65R380E6 transistor as follows.

IPD65R380E6 Transistor Specification

Transistor Code		IPD65R380E6
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK_TO252
Drain-Source Voltage (Maximum)	VDS	650V
Drain Current (Maximum)	ID	10.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.38Ohm
Power Dissipation (Maximum)	PD	83W
Total Gate Charge		39nC

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