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IPD65R190C7 MOSFET Transistor

The IPD65R190C7 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPD65R190C7 transistor as follows.

Circuit diagram symbol of the IPD65R190C7 transistor

IPD65R190C7 Transistor Specification

Transistor Code IPD65R190C7
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-252
Transistor SMD Code 65C7190
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 13A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.19Ohm
Power Dissipation (Maximum) PD 72W
Drain-Source Capacitance 17pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 11nS
Gate-Threshold Voltage (Maximum) 4V

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