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IPD60R600C6 MOSFET Transistor

The IPD60R600C6 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPD60R600C6 transistor as follows.

Circuit diagram symbol of the IPD60R600C6 transistor

IPD60R600C6 Transistor Specification

Transistor Code IPD60R600C6
Transistor Type MOSFET
Control Channel Type N-Channel
Package DPAK_TO252
Drain-Source Voltage (Maximum) VDS 600V
Drain Current (Maximum) ID 7.3A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.6Ohm
Power Dissipation (Maximum) PD 63W
Total Gate Charge 20.5nC

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