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IPD600N25N3G MOSFET Transistor

The IPD600N25N3G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPD600N25N3G transistor as follows.

Circuit diagram symbol of the IPD600N25N3G transistor

IPD600N25N3G Transistor Specification

Transistor Code IPD600N25N3G
Transistor Type MOSFET
Control Channel Type N-Channel
Package DPAK_TO252
Drain-Source Voltage (Maximum) VDS 250V
Drain Current (Maximum) ID 25A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.06Ohm
Power Dissipation (Maximum) PD 136W
Total Gate Charge 22nC

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