IPD50R500CE MOSFET Transistor

The IPD50R500CE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPD50R500CE transistor as follows.

IPD50R500CE Transistor Specification

Transistor Code		IPD50R500CE
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Transistor SMD Code		5R500CE
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	7.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.5Ohm
Power Dissipation (Maximum)	PD	57W
Drain-Source Capacitance		31pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5nS
Gate-Threshold Voltage (Maximum)		3.5V

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