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IPD50R3K0CE MOSFET Transistor

The IPD50R3K0CE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPD50R3K0CE transistor as follows.

Circuit diagram symbol of the IPD50R3K0CE transistor

IPD50R3K0CE Transistor Specification

Transistor Code IPD50R3K0CE
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-252
Transistor SMD Code 5R3K0CE
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 1.7A
Drain-Source On-State Resistance (Maximum) RDS(on) 3Ohm
Power Dissipation (Maximum) PD 18W
Drain-Source Capacitance 7pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 5.8nS
Gate-Threshold Voltage (Maximum) 3.5V

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