IPD50R3K0CE MOSFET Transistor

The IPD50R3K0CE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPD50R3K0CE transistor as follows.

IPD50R3K0CE Transistor Specification

Transistor Code		IPD50R3K0CE
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Transistor SMD Code		5R3K0CE
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	3Ohm
Power Dissipation (Maximum)	PD	18W
Drain-Source Capacitance		7pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		5.8nS
Gate-Threshold Voltage (Maximum)		3.5V

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