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IPD26N06S2L-35 MOSFET Transistor

The IPD26N06S2L-35 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPD26N06S2L-35 transistor as follows.

Circuit diagram symbol of the IPD26N06S2L-35 transistor

IPD26N06S2L-35 Transistor Specification

Transistor Code IPD26N06S2L-35
Transistor Type MOSFET
Control Channel Type N-Channel
Package PGTO252
Drain-Source Voltage (Maximum) VDS 55V
Drain Current (Maximum) ID 30A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.035Ohm
Power Dissipation (Maximum) PD 68W
Total Gate Charge 24nC

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