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IPD15N06S2L-64 MOSFET Transistor

The IPD15N06S2L-64 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPD15N06S2L-64 transistor as follows.

Circuit diagram symbol of the IPD15N06S2L-64 transistor

IPD15N06S2L-64 Transistor Specification

Transistor Code IPD15N06S2L-64
Transistor Type MOSFET
Control Channel Type N-Channel
Package PGTO252
Drain-Source Voltage (Maximum) VDS 55V
Drain Current (Maximum) ID 19A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.064Ohm
Power Dissipation (Maximum) PD 47W

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