IPD13N03LAG MOSFET Transistor

The IPD13N03LAG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPD13N03LAG transistor as follows.

IPD13N03LAG Transistor Specification

Transistor Code		IPD13N03LAG
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Transistor SMD Code		13N03LA
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	30A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0128Ohm
Power Dissipation (Maximum)	PD	46W
Drain-Source Capacitance		303pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		4.6nS
Gate-Threshold Voltage (Maximum)		2V

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