IPD127N06LG MOSFET Transistor

The IPD127N06LG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPD127N06LG transistor as follows.

IPD127N06LG Transistor Specification

Transistor Code		IPD127N06LG
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK_TO252
Drain-Source Voltage (Maximum)	VDS	60V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0127Ohm
Power Dissipation (Maximum)	PD	136W
Total Gate Charge		52nC

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