IPD096N08N3G MOSFET Transistor

The IPD096N08N3G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPD096N08N3G transistor as follows.

IPD096N08N3G Transistor Specification

Transistor Code		IPD096N08N3G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK_TO252
Drain-Source Voltage (Maximum)	VDS	80V
Drain Current (Maximum)	ID	73A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0096Ohm
Power Dissipation (Maximum)	PD	100W
Total Gate Charge		26nC

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