IPD088N04LG MOSFET Transistor

The IPD088N04LG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPD088N04LG transistor as follows.

IPD088N04LG Transistor Specification

Transistor Code		IPD088N04LG
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK_TO252
Drain-Source Voltage (Maximum)	VDS	40V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0088Ohm
Power Dissipation (Maximum)	PD	47W
Total Gate Charge		28nC

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